Plasma ashing equipment which is able to proceed batch processing for 6 inch wafer at the maximum.

 

This equipment has a wafer boat loading mechanism integrated with chamber open/close door made by ceramic. Wafer boat and quartz chamber won't contact, it is enabling clean and good uniformity process.

It is able to place 2 process chamber at maximum (with vertically), and able to proceed 50~100 pieces batch processing with wafer size up to 6 inch*.

 

Also, this equipment is corresponding with ashing process for resist on square type glass substrate, and plasma surface processing for small parts.

 

* Compatible with various sizes by boat change

Substrate size	Wafer : 6 inch at maximum（Batch processing）
Discharging method	Parallel Electrode Co-axial Electrode
RF Generator	13.56MHz, 1000W
Process Gas	O2、CF4、(Max. 3 Lines)
Use	Resist, Organic layer ashing Surface modification Hydrophilic improvement Plasma cleaning
Other function	Space saving - vertical 2 tiered chamber placement Drawer type automatic door Heating mechanism with halogen heater Internal electrode (Aluminum tunnel) Auto sequence, step control