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TEX Process by Mixed Acids (HF, HNO3) |
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This dront can be flattened by making TEX structure and removing the damage
layer on the back side. |
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TEX Process by Mixed Acids (HF, HNO3), (Isolation Process). |
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The back Etching is process without damaging to PSG layer. |
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Spray on the both sides of Wafer with phosphoric acid water soluton for
application. |
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Possible to rase the temperature at maz of 1000 degree C. |
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Applicable to variable needs with variable Temp. Profile. |
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Applicable for Gettering Sffect by changing dropping temp. zone module. |
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